200V N-Channel Enhancement Mode MOSFET

Features - VDS = 200V ID =120A - RDS(ON)

文件：1.09042 Mbytes 页数：9 Pages

APME

永源微电子

200V N-Channel Enhancement Mode MOSFET

Features - VDS = 200V ID =120A - RDS(ON)

文件：1.09042 Mbytes 页数：9 Pages

APME

永源微电子

HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features ● International standard packages ● JEDECTO-264 AA,epoxymeet UL94V-0, flammability classification ● miniBLOC with Aluminium nitride isolation ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● U

文件：112.37 Kbytes 页数：4 Pages

IXYS

艾赛斯

Switching (200V, 10A)

Switching (200V, 10A) Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. Application Switching

文件：62.12 Kbytes 页数：4 Pages

ROHM

罗姆

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE ■ HIGH CURRENT POWER MODULE ■ AVALANCHE RUGGED TECHNOLOGY (SEE STH33N20FI FOR RATING) ■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY ■ EASY TO MOUNT ■ SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS ■ EXTREMELY LOW Rth

文件：156.86 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体