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LV5803M-TE-L-E

Step-downSwitchingRegulator

SANYOSanyo Semicon Device

三洋三洋电机株式会社

MAX5803

Ultra-Small,Single-Channel,8-/10-/12-BitBufferedOutputVoltageDACswithInternalReferenceandI2CInterface

GeneralDescription TheMAX5803/MAX5804/MAX5805single-channel,low-power,8-/10-/12-bit,voltage-outputthisisanadditiontocontentdigital-to-analogconverters(DACs)includeoutputbuffersandaninternalreferencethatisselectabletobe2.048V,2.500V,or4.096V.TheMAX5803/MAX5804/MAX5

MaximMaxim Integrated Products

美信美信半导体

MAX5803ATB

Ultra-Small,Single-Channel,8-/10-/12-BitBufferedOutputVoltageDACswithInternalReferenceandI2CInterface

GeneralDescription TheMAX5803/MAX5804/MAX5805single-channel,low-power,8-/10-/12-bit,voltage-outputthisisanadditiontocontentdigital-to-analogconverters(DACs)includeoutputbuffersandaninternalreferencethatisselectabletobe2.048V,2.500V,or4.096V.TheMAX5803/MAX5804/MAX5

MaximMaxim Integrated Products

美信美信半导体

MAX5803AUB

Ultra-Small,Single-Channel,8-/10-/12-BitBufferedOutputVoltageDACswithInternalReferenceandI2CInterface

GeneralDescription TheMAX5803/MAX5804/MAX5805single-channel,low-power,8-/10-/12-bit,voltage-outputthisisanadditiontocontentdigital-to-analogconverters(DACs)includeoutputbuffersandaninternalreferencethatisselectabletobe2.048V,2.500V,or4.096V.TheMAX5803/MAX5804/MAX5

MaximMaxim Integrated Products

美信美信半导体

MCH5803

DC/DCConverterApplications

MOSFET:N-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features •CompositetypewithanN-ChannelSilliconMOSFET(MCH3408)andaSchottkyBarrierDiode(SBS006M)containedinonepackagefacilitatinghigh-densitymounting. [MOSFET] •LowON-resistance. •Ultrahigh-speedswi

SANYOSanyo Semicon Device

三洋三洋电机株式会社

NTD5803N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=76A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NTD5803N

PowerMOSFET40V,76A,SingleN?묬hannel,DPAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTD5803NG

PowerMOSFET40V,76A,SingleN?묬hannel,DPAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTE5803

NTE5800thruNTE5809AxialLeadStandardRecoverySiliconRectifiers,3Amp,DO27

Description: TheNTE5800throughNTE5809siliconrectifiersaredesignedforuseinpowersuppliesandotherapplicationshavingneedofadevicewiththefollowingfeatures: ●HighCurrenttoSmallSize ●HighSurgeCurrentCapability ●LowForwardVoltageDrop

NTE

NTE Electronics

NVD5803N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=85A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.7mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    AO5803E

  • 功能描述:

    MOSFET 2P-CH 20V 0.6A SC89-6L

  • RoHS:

  • 类别:

    分离式半导体产品 >> FET - 阵列

  • 系列:

    -

  • 产品目录绘图:

    8-SOIC Mosfet Package

  • 标准包装:

    1

  • 系列:

    - FET

  • 型:

    2 个 N 沟道(双) FET

  • 特点:

    逻辑电平门

  • 漏极至源极电压(Vdss):

    60V 电流 - 连续漏极(Id) @ 25°

  • C:

    3A 开态Rds(最大)@ Id, Vgs @ 25°

  • C:

    75 毫欧 @ 4.6A,10V Id 时的

  • Vgs(th)(最大):

    3V @ 250µA 闸电荷(Qg) @

  • Vgs:

    20nC @ 10V 输入电容(Ciss) @

  • Vds:

    - 功率 -

  • 最大:

    1.4W

  • 安装类型:

    表面贴装

  • 封装/外壳:

    PowerPAK? SO-8

  • 供应商设备封装:

    PowerPAK? SO-8

  • 包装:

    Digi-Reel®

  • 产品目录页面:

    1664(CN2011-ZH PDF)

  • 其它名称:

    SI7948DP-T1-GE3DKR

供应商型号品牌批号封装库存备注价格
AOS/万代
25+
SC89-6
32360
AOS/万代全新特价AO5803E即刻询购立享优惠#长期有货
询价
AO
16+
SC89-6
12500
进口原装现货/价格优势!
询价
AOS/万代
2019+
SC89-6
18000
原厂渠道 可含税出货
询价
AOS
24+
SC89-6
2100
原装原厂代理 可免费送样品
询价
AO
2020+PB
SC89-6
12500
原装正品 可含税交易
询价
AOS
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
AOS
23+
QR
8650
受权代理!全新原装现货特价热卖!
询价
AOS
23+
SC89-6
60000
原装正品现货
询价
AOS
24+
QR
65300
一级代理/放心采购
询价
AOS
1503+
SC-89-6
3000
就找我吧!--邀您体验愉快问购元件!
询价
更多AO5803E供应商 更新时间2025-7-28 20:12:00