首页 >AO3414超小型管>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
30VN-ChannelAlphaMOS | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
MonolithicICs | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
Single-SupplyDualHighCurrentOperational/AudioAmplifier | booklyBookly Micro electronic 百力微电子上海百力微电子股份有限公司 | bookly | ||
Single-supplyDualHighCurrentOperationalAmplifier | Ceramate Ceramate Technical | Ceramate | ||
Ultrahigh-SpeedSwitchingApplications Ultrahigh-SpeedSwitchingApplications Features •LowON-resistance. •Ultrahigh-speedswitching. •2.5Vdrive. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •25mΩ@VGS=4.5V •29mΩ@VGS=2.5V •37mΩ@VGS=1.8V •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Quali | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •25mΩ@VGS=4.5V •29mΩ@VGS=2.5V •37mΩ@VGS=1.8V •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHigh | TYSEMITY Semiconductor Co., Ltd 台湾TY半导体台湾TY半导体有限公司 | TYSEMI | ||
N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •25mΩ@VGS=4.5V •29mΩ@VGS=2.5V •37mΩ@VGS=1.8V •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHigh | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI | ||
N-CHANNELENHANCEMENTMODEMOSFET Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •LowOn-Resistance •LowInputCapacitance •FastSwitchingSpeed •LowInput/Output | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
LowPassFilters | RHOMBUS-IND Rhombus Industries Inc. | RHOMBUS-IND |
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