Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive.

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SANYO

三洋

N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

ONSEMI

安森美半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • 25mΩ @ VGS = 4.5V • 29mΩ @ VGS = 2.5V • 37mΩ @ VGS = 1.8V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Quali

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DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • 25mΩ @ VGS = 4.5V • 29mΩ @ VGS = 2.5V • 37mΩ @ VGS = 1.8V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High

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TYSEMI

台湾TY半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • 25mΩ @ VGS = 4.5V • 29mΩ @ VGS = 2.5V • 37mΩ @ VGS = 1.8V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High

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ZPSEMIZP Semiconductor

至尚臻品