N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications). Features • VDS (V) = 30V •

文件：279.75 Kbytes 页数：4 Pages

ALPHA

N-Channel enhancement mode field effect transistor

■ Features ● VDS (V) = 30V ● ID = 5.7 A (VGS = 10V) ● RDS(ON)

文件：1.90137 Mbytes 页数：4 Pages

KEXIN

科信电子

丝印：3400；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The AO3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.8A RDS(ON)

文件：914.26 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 5.7 A (VGS = 10V) ● RDS(ON)

文件：2.41941 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400 is Pb-free (meets ROHS & Sony 259 spec

文件：110.54 Kbytes 页数：4 Pages

AOSMD

万国半导体

30V P-Channel Enhancement Mode MOSFET

30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A

文件：1.4447 Mbytes 页数：3 Pages

HTSEMI

金誉半导体

P-Channel Enhancement MOSFET

■ Features ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON)

文件：1.56526 Mbytes 页数：4 Pages

KEXIN

科信电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product AO3401 is Pb-free (meets ROHS & Sony 259 spe

文件：181.24 Kbytes 页数：4 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode MOSFET

Feature ● -30V/-4.2A, RDS(ON) =55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V. ● Super High dense cell design for extremely low RDS(ON) ● Reliable and Rugged ● SOT-23 for Surface Mount Package Applicati

文件：356.09 Kbytes 页数：5 Pages

ZPSEMIZP Semiconductor

至尚臻品

丝印：B1H；Package：SOT23-3L；P-Channel Enhancement MOSFET

Features VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON)

文件：1.60001 Mbytes 页数：5 Pages

YFWDIODE

佑风微