COMPOUND TRANSISTOR

on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with AA1A4Z

文件：81.72 Kbytes 页数：4 Pages

NEC

瑞萨

on-chip resistor PNP silicon epitaxial transistor For mid-speed switching

FEATURES • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with AA1A4Z

文件：235.76 Kbytes 页数：6 Pages

RENESAS

瑞萨

COMPOUND TRANSISTOR

Renesas

瑞萨

NPN SILICON TRANSISTOR

DESCRIPTION The BA1F4M is designed for use in medium speed switching circuit. FEATURE ● Bias resistors built-in type NPN transistor equivalent circuit.

文件：133.34 Kbytes 页数：2 Pages

NEC

瑞萨

NPN SILICON TRANSISTOR

DESCRIPTION The BA1F4N is designed for use in medium speed switching circuit. FEATURE ● Bias resistors built-in type NPN transistor equivalent circuit.

文件：130.27 Kbytes 页数：2 Pages

NEC

瑞萨

COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with BN1F4Z

文件：83.52 Kbytes 页数：4 Pages

NEC

瑞萨