1.75uH, 15%, 2.8mOhm DIP Toroidal Inductor

Compact size high performance low cost. Withstands large current loads. Low leakage and minimal acoustic noise. • Compact size high performance low cost. • Withstands large current loads.• Low leakage and minimal acoustic noise.;

ITG

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

文件：45.27 Kbytes 页数：8 Pages

PHI

PHI

RF AMPLIFIER

文件：196.54 Kbytes 页数：1 Pages

APITECH

DDS - EP13 - Designed for use with Level One LXT400 and LXT441 Transceiver

文件：27.93 Kbytes 页数：1 Pages

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