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型号	下载订购	功能描述	制造商上传企业	LOGO
BA1F4N	文件：130.27 Kbytes Page：2 Pages	NPN SILICON TRANSISTOR DESCRIPTION The BA1F4N is designed for use in medium speed switching circuit. FEATURE ● Bias resistors built-in type NPN transistor equivalent circuit. 文件：130.27 Kbytes 页数：2 Pages	NEC 瑞萨	NEC
BA1F4N	文件：300 bytes Page：1 Pages	NPN SILICON TRANSISTOR	Renesas 瑞萨	Renesas
BA1F4Z	文件：83.52 Kbytes Page：4 Pages	COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with BN1F4Z 文件：83.52 Kbytes 页数：4 Pages	NEC 瑞萨	NEC
BA1F4Z	文件：238.17 Kbytes Page：6 Pages	COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with BN1F4Z 文件：238.17 Kbytes 页数：6 Pages	RENESAS 瑞萨	RENESAS
BN1F4M	文件：133.69 Kbytes Page：2 Pages	The BN1F4M is designed for use in medium speed switching circuit. DESCRIPTION The BN1F4M is designed for use in medium speed switching circuit. FEATURE ● Bias resistors built-in type PNP transistor equivalent circuit. 文件：133.69 Kbytes 页数：2 Pages	NEC 瑞萨	NEC

更多BA1F4N供应商更新时间2025-12-1 11:01:00