The BN1F4M is designed for use in medium speed switching circuit.

DESCRIPTION The BN1F4M is designed for use in medium speed switching circuit. FEATURE ● Bias resistors built-in type PNP transistor equivalent circuit.

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The BN1F4M is designed for use in medium speed switching circuit.

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The BN1F4N is esiged for use in medium speed switching circuit.

DESCRIPTION The BN1F4N is dsigned for use in medium speed switching circuit. FEATURES ● Bias resistors built-in type PNP transistor equivalent circuit.

文件：130.81 Kbytes 页数：2 Pages

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on-chip resistor PNP silicon epitaxial transistor For mid-speed switching

FEATURES • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with BA1F4Z

文件：84.76 Kbytes 页数：4 Pages

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COMPOUND TRANSISTOR

on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with BA1F4Z

文件：239.28 Kbytes 页数：6 Pages

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