FDD3670

iscN-ChannelMOSFETTransistor

FDD3670

N-channelEnhancementModePowerMOSFET

Features VDS=100V,ID=30A RDS(ON)

FDS3670

PowerConverterTopologyandMOSFETSelectionfor48-VTelecom

FDS3670

100VN-ChannelPowerTrench??MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(O

FDS3670

100VN-ChannelPowerTrenchMOSFET

FDS3670-TP

N-Channel100-V(D-S)MOSFET

Application| «LEDBackiighting «SynchronousRectifiersforSMPS. »Powermanagement «PWMApplication|

INN3670C

Off-LineCV/CCQRFlybackSwitcherICwithIntegratedPrimarySwitch,SynchronousRectificationandFluxLinkFeedback

HighlyIntegrated,CompactFootprint •Veryhighefficiencyacrossfullloadrange •Incorporatesamulti-modeQuasi-Resonant(QR)/CCMflyback controller,high-voltageswitch,secondary-sidesensingandsynchronous rectificationdriver •Excellentmulti-outputcrossregulationwithweighted

KDD3670

100VN-ChannelPowerTrenchMOSFET

Features ●34A,100V.RDS(ON)=32mΩ@VGS=10V RDS(ON)=35mΩ@VGS=6V ●Lowgatecharge(57nCtypical) Fastswitchingspeed ●HighperformancetrenchtechnologyforextremelylowRDS(ON) ●Highpowerandcurrenthandlingcapability

LM3670

LM3670MiniatureStep-DownDC-DCConverterforUltraLowVoltageCircuits

LM3670

MiniatureStep-DownDC-DCConverterforUltraLowVoltageCircuits