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FQA8N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=8.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQA8N80C

800VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQA8N80C

800VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQA8N80C

800VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQAF8N80

800VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQAF8N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=5.9A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQP8N80C

800VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP8N80C

800VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP8N80C

8.0A,800VHeatsinkPlanarN-ChannelPowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

FQP8N80C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.55Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
AIMTEC
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
AIMTEC
23+
DIP
67336
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
AIMTEC
2021+
DIP
11000
十年专营原装现货,假一赔十
询价
24+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
询价
AIMTEC
24+
SIP
5000
全新原装,一手货源,全场热卖!
询价
更多AM8N80P供应商 更新时间2025-7-25 15:11:00