AO3423

P-ChannelEnhancementMOSFET

Features VDS(V)=-20V ID=-2.0A(VGS=-10V) RDS(ON)

AO3423A

SOT-23-3LPlastic-EncapsulateMOSFETS

FEATURE ※TrenchFETPowerMOSFET ※ESDProtected2.0KV

AO3423-HF

P-ChannelMOSFET

Features ●VDS(V)=-20V ●RDS(ON)≤100m@(VGS=-4.5V) ●RDS(ON)≤150m@(VGS=-2.5V) ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish

AO3423L

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO3423usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ItisESDprotected.StandardProductAO3423isPb-free(meetsROH

AO3423L

20VP-ChannelMOSFET

AP3423

1.2A,1.4MHz,DualSynchronousDC-DCBuckConverter

BA3423S

Doublecassettetaperecordersystempreamplifier

Doublecassettetaperecordersystempreamplifier TheBA3423Sisarecord/playbacksystempreamplifierforradiocassettedecks.WithfourcontrolpinsitallowsswitchingbetweenI/OfortheA(playonly)andB(recordandplay)mechanisms,inputfortape,radio,andmicrophone,onandoff

C3423

SiliconNPNEpitaxialType(PCTProcess)AudioFrequencyAmplifierApplications

CED3423

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-18A,RDS(ON)=45mΩ@VGS=-10V. RDS(ON)=80mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU3423

P-ChannelEnhancementModeFieldEffectTransistor