SOT-23-3L Plastic-Encapsulate MOSFETS

FEATURE ※ TrenchFET Power MOSFET ※ ESD Protected 2.0KV

文件：394.36 Kbytes 页数：3 Pages

UMW

友台半导体

P-Channel MOSFET

Features ● VDS (V) = -20V ● RDS(ON) ≤ 100m@ (VGS = -4.5V) ● RDS(ON) ≤ 150m@ (VGS = -2.5V) ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

文件：1.82533 Mbytes 页数：5 Pages

KEXIN

科信电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3423 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO3423 is Pb-free (meets ROH

文件：126.51 Kbytes 页数：4 Pages

AOSMD

万国半导体

20V P-Channel MOSFET

文件：288.52 Kbytes 页数：5 Pages

AOSMD

万国半导体