MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM2306 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch and PWM applications. The AM2306 is available in SOT-23S package. FEATURES  VDS = 30V,ID = 5.8A RDS(ON)

文件：703.12 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM2306 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch and PWM applications. The AM2306 is available in SOT-23S package. FEATURES  VDS = 30V,ID = 5.8A RDS(ON)

文件：703.12 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

传感器

AOSONG

上传：齐创科技(上海,北京,青岛)有限公司

LGA44

AM

上传：深圳市富芯乐电子科技有限公司

原厂封装

TI/德州仪器

上传：深圳市腾胜芯科技有限公司