AM2313P

P - Channel Logic Level MOSFET

TheseminiaturesurfacemountMOSFETsutilizeHighCellDensityprocess.LowrDS(on)assuresminimalpowerlossandconservesenergy,makingthisdeviceidealforuseinpowermanagementcircuitry.Typicalapplicationsarevoltagecontrolsmallsignalswitch,powermanagementinportableandbatte

AM2313P-T1-PF

P-Channel 60 V (D-S) MOSFET

AP2313GN-HF

SimpleDriveRequirement,SmallPackageOutline

APM2313

P-ChannelEnhancementModeMOSFET

Features •-20V/-1.8A,RDS(ON)=108mΩ(typ.)@VGS=-4.5V RDS(ON)=135mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremely LowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquip

APM2313A

P-ChannelEnhancementModeMOSFET

Features •-20V/-1.8A,RDS(ON)=108mΩ(typ.)@VGS=-4.5V RDS(ON)=135mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremely LowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquip

APM2313AC-TR

P-ChannelEnhancementModeMOSFET

Features •-20V/-1.8A,RDS(ON)=108mΩ(typ.)@VGS=-4.5V RDS(ON)=135mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremely LowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquip

ATTINY2313

8-bitAVRMicrocontrollerwith2KBytesIn-SystemProgrammableFlash

TheATtiny2313isalow-powerCMOS8-bitmicrocontrollerbasedontheAVRenhancedRISCarchitecture.Byexecutingpowerfulinstructionsinasingleclockcycle,theATtiny2313achievesthroughputsapproaching1MIPSperMHzallowingthesystemdesignertooptimizepowerconsumptionversusprocess

ATTINY2313

8-bitMicrocontrollerwith2KBytesIn-SystemProgrammableFlash

TheATtiny2313isalow-powerCMOS8-bitmicrocontrollerbasedontheAVRenhancedRISCarchitecture.Byexecutingpowerfulinstructionsinasingleclockcycle,theATtiny2313achievesthroughputsapproaching1MIPSperMHzallowingthesystemdesignertooptimizepowerconsumptionversusprocess

ATTINY2313

8-bitMicrocontrollerwith2KBytesIn-SystemProgrammableFlash

ATTINY2313

DataandNon-volatileProgramandDataMemories