MOSFET N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2310 is available in SOT-23S package. FEATURES  18V/3.5A, RDS(ON) = 80mΩ(MAX) @VGS = 4.5V. RDS(ON) = 90mΩ(MAX) @VGS = 2.5V.  Super High dense cell design for extremely low RDS(ON) .  Reliable and Rugged.  Available in SOT-23S Package APPLICATION  Power Manageme

文件：434.93 Kbytes 页数：6 Pages

AITSEMI

创瑞科技

SOT-23/SOT-23S 晶體管

AiT-Semi

创瑞科技

MOSFET N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2310 is available in SOT-23S package. FEATURES  18V/3.5A, RDS(ON) = 80mΩ(MAX) @VGS = 4.5V. RDS(ON) = 90mΩ(MAX) @VGS = 2.5V.  Super High dense cell design for extremely low RDS(ON) .  Reliable and Rugged.  Available in SOT-23S Package APPLICATION  Power Manageme

文件：434.93 Kbytes 页数：6 Pages

AITSEMI

创瑞科技

MOSFET N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2310 is available in SOT-23S package. FEATURES  18V/3.5A, RDS(ON) = 80mΩ(MAX) @VGS = 4.5V. RDS(ON) = 90mΩ(MAX) @VGS = 2.5V.  Super High dense cell design for extremely low RDS(ON) .  Reliable and Rugged.  Available in SOT-23S Package APPLICATION  Power Manageme

文件：434.93 Kbytes 页数：6 Pages

AITSEMI

创瑞科技

N-Channel Logic Level MOSFET

These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powe

文件：244.04 Kbytes 页数：5 Pages

ANALOGPOWER

MOSFET

AnalogPower

美商亚柏