MOSFET -20V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2301A is available in SOT-23S package. FEATURES  VDS =-20V  RDS(ON),VGS@-4.5V,IDS@-4.7A=70mΩ  RDS(ON),VGS@-2.5V,IDS@-1.0A=110mΩ  Available in SOT-23S Package APPLICATION  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance

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MOSFET -20V P-CHANNEL ENHANCEMENT MODE

FEATURES Super High dense cell design for extremely low R DS(ON) Reliable and Rugged Available in SOT 23 package APPLICATIONS Power Management Portable Equipment and Battery Powered Systems.

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MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2301 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). .low gate charge and operation gate as 2.5V. This device is suitable for use as a load switch or other genera

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MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2301 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). .low gate charge and operation gate as 2.5V. This device is suitable for use as a load switch or other genera

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P-Channel 20-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA

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AnalogPower

MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. AM2302 is available in a SOT-23S package. FEATURES

文件：1.37981 Mbytes 页数：9 Pages

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MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. AM2302 is available in a SOT-23S package. FEATURES

文件：1.37981 Mbytes 页数：9 Pages

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MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. AM2302 is available in a SOT-23S package. FEATURES

文件：1.37981 Mbytes 页数：9 Pages

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MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2303 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON) low gate charge and operation gate as 2.5V. This device is suitable for use as a load switch or other general

文件：623.89 Kbytes 页数：8 Pages

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MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2303 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON) low gate charge and operation gate as 2.5V. This device is suitable for use as a load switch or other general

文件：623.89 Kbytes 页数：8 Pages

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