ANALOGUE TIMERS ELECTROMECHANICAL CAM TIMERS

Modular cam timer assembly kits Cycle time 3 secs to 24 hrs One on/off period per cycle 2, 4 or 6 micro switches 110 or 230V operation Screw adjustable cams (tool supplied)

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TEMPATRON

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS=20V VGS=±12V ID(A)= 5A RDS(ON) = 22mΩ(typ.)@VGS = 4.5V RDS(ON) = 25mΩ(typ.)@VGS = 2.5V RDS(ON) = 30mΩ(typ.)@VGS = 1.8V AM2300 is available in SOT-23 and SOT-23S packages. FEATURES ⚫ Fast switch ⚫ 1.8V Low gate drive applications ⚫ High power and current handling capabi

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MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS=20V VGS=±12V ID(A)= 5A RDS(ON) = 22mΩ(typ.)@VGS = 4.5V RDS(ON) = 25mΩ(typ.)@VGS = 2.5V RDS(ON) = 30mΩ(typ.)@VGS = 1.8V AM2300 is available in SOT-23 and SOT-23S packages. FEATURES ⚫ Fast switch ⚫ 1.8V Low gate drive applications ⚫ High power and current handling capabi

文件：501.1 Kbytes 页数：9 Pages

AITSEMI

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MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS=20V VGS=±12V ID(A)= 5A RDS(ON) = 22mΩ(typ.)@VGS = 4.5V RDS(ON) = 25mΩ(typ.)@VGS = 2.5V RDS(ON) = 30mΩ(typ.)@VGS = 1.8V AM2300 is available in SOT-23 and SOT-23S packages. FEATURES ⚫ Fast switch ⚫ 1.8V Low gate drive applications ⚫ High power and current handling capabi

文件：501.1 Kbytes 页数：9 Pages

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MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS=20V VGS=±12V ID(A)= 5A RDS(ON) = 22mΩ(typ.)@VGS = 4.5V RDS(ON) = 25mΩ(typ.)@VGS = 2.5V RDS(ON) = 30mΩ(typ.)@VGS = 1.8V AM2300 is available in SOT-23 and SOT-23S packages. FEATURES ⚫ Fast switch ⚫ 1.8V Low gate drive applications ⚫ High power and current handling capabi

文件：501.1 Kbytes 页数：9 Pages

AITSEMI

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MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS=20V VGS=±12V ID(A)= 5A RDS(ON) = 22mΩ(typ.)@VGS = 4.5V RDS(ON) = 25mΩ(typ.)@VGS = 2.5V RDS(ON) = 30mΩ(typ.)@VGS = 1.8V AM2300 is available in SOT-23 and SOT-23S packages. FEATURES ⚫ Fast switch ⚫ 1.8V Low gate drive applications ⚫ High power and current handling capabi

文件：501.1 Kbytes 页数：9 Pages

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N-Channel 20-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products

文件：238.16 Kbytes 页数：5 Pages

AnalogPower

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2301 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). .low gate charge and operation gate as 2.5V. This device is suitable for use as a load switch or other genera

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MOSFET -20V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2301A is available in SOT-23S package. FEATURES  VDS =-20V  RDS(ON),VGS@-4.5V,IDS@-4.7A=70mΩ  RDS(ON),VGS@-2.5V,IDS@-1.0A=110mΩ  Available in SOT-23S Package APPLICATION  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance

文件：335.01 Kbytes 页数：6 Pages

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MOSFET -20V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2301A is available in SOT-23S package. FEATURES  VDS =-20V  RDS(ON),VGS@-4.5V,IDS@-4.7A=70mΩ  RDS(ON),VGS@-2.5V,IDS@-1.0A=110mΩ  Available in SOT-23S Package APPLICATION  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance

文件：335.01 Kbytes 页数：6 Pages

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