MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2303 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON) low gate charge and operation gate as 2.5V. This device is suitable for use as a load switch or other general

文件：623.89 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

SOT-23/SOT-23S 晶體管

AiT-Semi

创瑞科技

MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2303 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON) low gate charge and operation gate as 2.5V. This device is suitable for use as a load switch or other general

文件：623.89 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2303 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON) low gate charge and operation gate as 2.5V. This device is suitable for use as a load switch or other general

文件：623.89 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

P-Channel 20-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA

文件：252.93 Kbytes 页数：5 Pages

AnalogPower

MOSFET

AnalogPower

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