丝印：AK15EDF5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti-parallel diode

Features and Benefits: High speed F5 technology offering: • Best-in-Class efficiency in hard switching and resonant topologies • 650V breakdown voltage • Low gate charge QG • IGBT copacked with RAPID 1 fast and soft antiparallel diode • Maximum junction temperature 175°C • Dynamically stre

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INFINEON

英飞凌

World-class low-cost power for fast-switching applications in small SMD packages

Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/ • TRENCHSTOP™ 5 technology with low VCEsat, optimized as F5 variant (Highest Efficiency Variant) for highest possible switching speed\n• 650V break-down voltage, 15A nominal current\n• Co-packed with RAPID-1 fast and soft anti-parallel diode\n• Very fast switching (up to 150kHz)\n• Automotive qualif;

Infineon

英飞凌

TO247

INFINEON

英飞凌

上传：深圳市杰顺创科技有限公司

GPRS

AIR

上传：深圳市得捷芯城科技有限公司

LGA12

ST

上传：深圳市鑫炜纳电子有限公司