Hybrid Power Discrete with SiC power technology in THD package for e-Mobility applications

Best cost-performance is the most important aspect for auxiliary applications in electric vehicles and hybrid vehicles. Therefore, Infineon has developed a hybrid of 650V TRENCHSTOP™ 5 AUTO fast-switching IGBT and CoolSiC™ Schottky Diode to enable a cost-efficient performance boost for fast switchin • 650V TRENCHSTOP™ 5 IGBT + CoolSiC™ Schottky Diode Gen5\n• Best-in-class switching and conduction losses\n• No reverse & forward recovery charge\n• High operating temp: Tj,max = 175°C\n• Robust against surge currents\n• Low gate charge Qg\n\n优势:\n• Highest reliability against environmental conditio;

Infineon

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：SIC_DISCRETE

Infineon

英飞凌

TO247

Infineon

英飞凌

上传：深圳市杰顺创科技有限公司

GPRS

AIR

上传：深圳市得捷芯城科技有限公司

LGA12

ST

上传：深圳市鑫炜纳电子有限公司