AIKW50N65RF5中文资料Hybrid Power Discrete with SiC power technology in THD package for e-Mobility applications数据手册Infineon规格书

描述 Description

Best cost-performance is the most important aspect for auxiliary applications in electric vehicles and hybrid vehicles. Therefore, Infineon has developed a hybrid of 650V TRENCHSTOP™ 5 AUTO fast-switching IGBT and CoolSiC™ Schottky Diode to enable a cost-efficient performance boost for fast switching automotive applications such as On-Board Charger, PFC, DC-DC and DC-AC.The combination of a best-in-class fast-switching IGBT with a very reliable SiC Diode builds a perfect cost-performance trade-off for hard-switching topologies. Due to the Qrr-free unipolar CoolSiC™ Schottky Diode, the Eon of the IGBT will be reduced significantly over silicon-only solutions. This makes the hybrid the first-choice for system-cost-sensitive hard commutation applications, such as Totem Pole topology in Automotive On-Board Charger applications. This results in better margin for low-complexity design-in activities.

特性 Features

• 650V TRENCHSTOP™ 5 IGBT + CoolSiC™ Schottky Diode Gen5
• Best-in-class switching and conduction losses
• No reverse & forward recovery charge
• High operating temp: Tj,max = 175°C
• Robust against surge currents
• Low gate charge Qg

优势:
• Highest reliability against environmental conditions
• Increased system efficiency
• Best performance/cost ratio for hard switching topologies (e.g. Totem Pole)
• Supporting bi-directional On-Board Charger designs

应用 Application

• On-Board Charger
• PFC• DC-DC

简介

AIKW50N65RF5属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的AIKW50N65RF5晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。