AIKW20N60CT数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

Infineon's Discrete IGBT TRENCHSTOP™ and Fieldstop technology for 600V Automotive applications offers very tight parameter distribution, high ruggedness, temperature stable behavior and very high switching speed.

特性 Features

• Very low V CEsat1.5V (typ.)
• Maximum junction temperature 175°C
• Short circuit withstand time 5µs
• Positive temperature coefficient in V CEsat
• Low EMI
• Low gate charge
• Green package
• Very soft, fast recovery anti-parallel Emitter Controlled HE diode

优势:

应用 Application

• Main inverter
• AirCon compressor
• PTC heater
• Motor drives

简介

AIKW20N60CT属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的AIKW20N60CT晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。