AIKB50N65DH5数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC.
TRENCHSTOP™ 5 AUTO is an IGBT technology that enables world’s lowest losses for switching and conduction in its category. The resulting high efficiency enables either an increased cruising range or a downsizing of the batteries for electric vehicles. For hybrid vehicles, it helps to reduce overall fuel consumption. The great performance of TRENCHSTOP™ 5 AUTO offers a cost-optimized solution where engineers were used to use MOSFETs only.
Moreover, TRENCHSTOP™ 5 AUTO technology in an SMD housing, like the D²PAK (PG-TO263-3), even further decreases IGBT solution costs by reducing cost on  system and manufacturing level. This comes with the benefit of increased quality control due to automated processes.

特性 Features

• TRENCHSTOP™ 5 technology with low VCEsat, optimized as H5 variant (High Speed Variant) with softer switching behavior for easier design-in
• 650V break-down voltage, 50A nominal current
• Co-packed with RAPID-1 fast and soft anti-parallel diode
• Very fast switching (up to 150kHz)
• Automotive qualified in accordance to Infineon quality standards
• Max junction temperature 175 °C
• Highest efficiency
• very low conduction losses
• very low switching losses

• Very low junction and case temperature
• SMD D2PAK package for low assembly costs and higher power density
• Extremely robust

应用 Application

• On-Board Charger (mainly in the PFC stage)
• DC-DC or DC-AC
• Auxiliary drive (e.g. Motor drive)

简介

AIKB50N65DH5属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的AIKB50N65DH5晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。