丝印：AK40EDF5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode

Features and Benefits: High speed F5 technology offering: • Best-in-Class efficiency in hard switching and resonant topologies • 650V breakdown voltage • Low gate charge QG • IGBT copacked with RAPID 1 fast and soft antiparallel diode • Maximum junction temperature 175°C • Dynamically stre

文件：1.56448 Mbytes 页数：16 Pages

Infineon

英飞凌

采用小型 SMD 封装的世界一流低成本电源，适用于快速开关应用

Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/ • TRENCHSTOP™ 5 technology with low VCEsat, optimized as F5 variant (Highest Efficiency Variant) for highest possible switching speed\n• 650V break-down voltage, 40A nominal current\n• Co-packed with RAPID-1 fast and soft anti-parallel diode\n• Very fast switching (up to 150kHz)\n• Automotive qualif;

Infineon

英飞凌

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：DISCRETE SWITCHES

Infineon

英飞凌

High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode

文件：1.99836 Mbytes 页数：16 Pages

Infineon

英飞凌