丝印：AKQB16FCP；Package：PG-TO247-3-PLUS-NN8.5；Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package co-packed with soft and fast recovery diode

Features • VCE = 750 V • IC = 160 A • Suitable for 470 V VDC systems and increase overvoltage margin for 400 V VDC systems • Very low VCEsat = 1.4 V (typ.) at ICnom = 160 A, 25°C • Short circuit robust tsc = 5 μs at VCE = 470 V, VGE = 15 V • Up to 40% less System Rth due to reflow capabi

文件：1.59998 Mbytes 页数：17 Pages

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英飞凌

750 V、160 A EDT2 IGBT，带反并联二极管，采用可回流焊接的 TO247PLUS 3 针封装

AIKQB160N75CP2 分立 IGBT 采用 3 引脚 TO247PLUS 封装，具有 750V EDT2 技术，非常适合支持高达 470V 电池电压的高压汽车应用。它可实现轻松并联、系统灵活性和功率可扩展性。将现有的 AIKQ120N75CP2 设计升级到具有 160A 直接替换的更高功率等级。通过使用回流焊接组件，可实现高达 40% 的更好的热导率。 • 同类最佳的 750 V TO247PLUS\n• 适用于 470 V VDC 系统\n• 极低的 VCEsat\n• 短路耐受时间 tsc = 3 µs\n• 260°C 回流焊合格器件\n• 自限短路电流\n• 极紧密的参数分布\n• 低栅极电荷 QG\n• 电阻可焊引脚\n• 高爬电距离\n• 产品验证符合 AEC-Q101 标准;

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英飞凌

Duo Pack EDT2™ IGBT and emitter controlled diode in TO247PLUS package

Features • VCE = 750 V • IC = 160 A • Suitable for 470 V VDC systems and increased overvoltage margin for 400 V VDC systems • Very low VCEsat (C-KE) = 1.22 V (typ.) at ICnom = 160 A, 25°C • Up to 40% less System Rth due to reflow capability, increased power output • 30% Less Turn On

文件：1.6501 Mbytes 页数：19 Pages

Infineon

英飞凌

Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package co-packed with soft and fast recovery diode

Features • VCE = 750 V • IC = 160 A • Low saturation voltage VCEsat = 1.4 V • Low switching losses • Short circuit ruggedness 3 μs • IGBT co-packed with full current, soft and fast recovery diode • Optimized for hard switching topologies up to 10 KHz • Package backside suitable for reflow

文件：1.62351 Mbytes 页数：17 Pages

Infineon

英飞凌