Contact arrangement of 4a or 4a1b

Features - Contact arrangement of 4a or 4a1b - Compact size: W (35mm) x L (58mm) x H (47mm) - Short circuit capability VDE-certified according to IEC 62955, In ≤ 32A - Clearance & creepage distance > 8.0mm - Coil holding power: 490mW - Mirror contact structure according to IEC 60947-4-1 -

文件：589.06 Kbytes 页数：4 Pages

Panasonic

松下

功率继电器

Panasonic

松下

This report shows the analysis performed on Power MOSFET devices

文件：1.49426 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4191 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. The device well suited for high current applications. -RoHS Compliant -Halogen Free* Features VDS (V) = -40V ID = -34A (VGS = -10V) RDS(ON)

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AOSMD

万国半导体

P-Channel 40 V (D-S) MOSFET

文件：976.41 Kbytes 页数：7 Pages

VBSEMI

微碧半导体