丝印：AHC32；Package：WQFN；SNx4AHC32 Quadruple 2-Input Positive-OR Gates

1 Features • Operating range 2-V to 5.5-V VCC • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at 5 V • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an indicator LED • Translation between communication m

文件：2.83321 Mbytes 页数：42 Pages

TI

德州仪器

丝印：AHC32；Package：TVSOP；SNx4AHC32 Quadruple 2-Input Positive-OR Gates

1 Features • Operating range 2-V to 5.5-V VCC • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at 5 V • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an indicator LED • Translation between communication m

文件：2.83321 Mbytes 页数：42 Pages

TI

德州仪器

丝印：AHC32；Package：PDIP；SNx4AHC32 Quadruple 2-Input Positive-OR Gates

1 Features • Operating range 2-V to 5.5-V VCC • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at 5 V • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an indicator LED • Translation between communication m

文件：2.83321 Mbytes 页数：42 Pages

TI

德州仪器

丝印：AHC32MEP；Package：SOIC；QUADRUPLE 2-INPUT POSITIVE-OR GATE

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† EPIC (Enhanced-Performance Implanted CMOS) Process

文件：211.44 Kbytes 页数：10 Pages

TI2

德州仪器

丝印：AHC32MEP；Package：SOIC；QUADRUPLE 2-INPUT POSITIVE-OR GATE

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† EPIC (Enhanced-Performance Implanted CMOS) Process

文件：211.44 Kbytes 页数：10 Pages

TI2

德州仪器

丝印：AHC32EP；Package：TSSOP；QUADRUPLE 2-INPUT POSITIVE-OR GATE

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† EPIC (Enhanced-Performance Implanted CMOS) Process

文件：211.44 Kbytes 页数：10 Pages

TI2

德州仪器

丝印：AHC32EP；Package：TSSOP；QUADRUPLE 2-INPUT POSITIVE-OR GATE

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† EPIC (Enhanced-Performance Implanted CMOS) Process

文件：211.44 Kbytes 页数：10 Pages

TI2

德州仪器

丝印：AHC32Q；Package：SOIC；SN74AHC32Q-Q1 Quadruple 2-Input Positive-OR Gates

1 Features • Qualified for Automotive Applications • Operating range 2-V to 5.5-V VCC • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at 5 V • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an indicator L

文件：1.45807 Mbytes 页数：26 Pages

TI

德州仪器

丝印：AHC32Q；Package：SOIC；SN74AHC32Q-Q1 Quadruple 2-Input Positive-OR Gates

1 Features • Qualified for Automotive Applications • Operating range 2-V to 5.5-V VCC • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at 5 V • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an indicator L

文件：1.45807 Mbytes 页数：26 Pages

TI

德州仪器

丝印：AHC32Q；Package：WQFN；SN74AHC32Q-Q1 Quadruple 2-Input Positive-OR Gates

1 Features • Qualified for Automotive Applications • Operating range 2-V to 5.5-V VCC • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at 5 V • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an indicator L

文件：1.45807 Mbytes 页数：26 Pages

TI

德州仪器