丝印：AHCT08；Package：WQFN；SNx4AHCT08 Quadruple 2-Input Positive-AND Gates

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22: – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • On products compliant to MIL-PRF-38535, All parameter

文件：2.79634 Mbytes 页数：39 Pages

TI

德州仪器

丝印：AHCT08；Package：SOIC；SNx4AHCT08 Quadruple 2-Input Positive-AND Gates

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22: – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • On products compliant to MIL-PRF-38535, All parameter

文件：2.79634 Mbytes 页数：39 Pages

TI

德州仪器

丝印：AHCT08；Package：SOIC；SNx4AHCT08 Quadruple 2-Input Positive-AND Gates

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22: – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • On products compliant to MIL-PRF-38535, All parameter

文件：2.79634 Mbytes 页数：39 Pages

TI

德州仪器

丝印：AHCT08；Package：SO；SNx4AHCT08 Quadruple 2-Input Positive-AND Gates

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22: – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • On products compliant to MIL-PRF-38535, All parameter

文件：2.79634 Mbytes 页数：39 Pages

TI

德州仪器

丝印：AHCT08MEP；Package：SOIC；QUADRUPLE 2-INPUT POSITIVE-AND GATE

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† EPIC (Enhanced-Performance Implanted CMOS) Process

文件：198.54 Kbytes 页数：9 Pages

TI

德州仪器

丝印：AHCT08MEP；Package：SOIC；QUADRUPLE 2-INPUT POSITIVE-AND GATE

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† EPIC (Enhanced-Performance Implanted CMOS) Process

文件：198.54 Kbytes 页数：9 Pages

TI

德州仪器

丝印：AHCT08Q；Package：SOIC；SN74AHCT08Q-Q1 Automotive Quadruple 2-Input Positive-AND Gates

1 Features • Qualified for automotive applications • EPIC™ (enhanced-performance implanted CMOS) process • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Combine power good signals • Combine enable signals 3 Description The SN74A

文件：1.23013 Mbytes 页数：20 Pages

TI

德州仪器

丝印：AHCT08Q；Package：SOIC；SN74AHCT08Q-Q1 Automotive Quadruple 2-Input Positive-AND Gates

1 Features • Qualified for automotive applications • EPIC™ (enhanced-performance implanted CMOS) process • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Combine power good signals • Combine enable signals 3 Description The SN74A

文件：1.4394 Mbytes 页数：23 Pages

TI

德州仪器

丝印：AHCT08Q；Package：SOIC；SN74AHCT08Q-Q1 Automotive Quadruple 2-Input Positive-AND Gates

1 Features • Qualified for automotive applications • EPIC™ (enhanced-performance implanted CMOS) process • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Combine power good signals • Combine enable signals 3 Description The SN74A

文件：1.4394 Mbytes 页数：23 Pages

TI

德州仪器

丝印：AHCT08Q；Package：SOIC；SN74AHCT08Q-Q1 Automotive Quadruple 2-Input Positive-AND Gates

1 Features • Qualified for automotive applications • EPIC™ (enhanced-performance implanted CMOS) process • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Combine power good signals • Combine enable signals 3 Description The SN74A

文件：1.23013 Mbytes 页数：20 Pages

TI

德州仪器