丝印：AHCT08MEP；Package：SOIC；QUADRUPLE 2-INPUT POSITIVE-AND GATE

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† EPIC (Enhanced-Performance Implanted CMOS) Process

文件：198.54 Kbytes 页数：9 Pages

TI

德州仪器

丝印：AHCT08MEP；Package：SOIC；QUADRUPLE 2-INPUT POSITIVE-AND GATE

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† EPIC (Enhanced-Performance Implanted CMOS) Process

文件：198.54 Kbytes 页数：9 Pages

TI

德州仪器

丝印：AHCT08MEP；Package：SOIC；QUADRUPLE 2-INPUT POSITIVE-AND GATE

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† EPIC (Enhanced-Performance Implanted CMOS) Process

文件：198.54 Kbytes 页数：9 Pages

TI

德州仪器

丝印：AHCT08MEP；Package：SOIC；QUADRUPLE 2-INPUT POSITIVE-AND GATE

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† EPIC (Enhanced-Performance Implanted CMOS) Process

文件：198.54 Kbytes 页数：9 Pages

TI

德州仪器