12-300V N MOSFET

AGMsemi

芯控源

Implementing a Glucometer and Blood Pressure Monitor Medical Devices

文件：2.83691 Mbytes 页数：31 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

High Performance IR Enhanced P-Type silicon p-i-n Photodiodes

Features Optimized Responsivity for Operation at1064 nm. Guard Ring Construction Antireflection Coated Hermetically Sealed Package Wide Range of Operating Voltage (0to -200V) Applications Nd: YAG Laser Detection Optical Communications Intrusion Alarm Systems Process Control Instrument

文件：224.32 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：309.15 Kbytes 页数：2 Pages

ISC

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