High Performance IR Enhanced P-Type silicon p-i-n Photodiodes

Features Optimized Responsivity for Operation at1064 nm. Guard Ring Construction Antireflection Coated Hermetically Sealed Package Wide Range of Operating Voltage (0to -200V) Applications Nd: YAG Laser Detection Optical Communications Intrusion Alarm Systems Process Control Instrument

文件：224.32 Kbytes 页数：4 Pages

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Buffered Triple 3-Input NAND,NOR Gate

文件：127.67 Kbytes 页数：6 Pages

NSC

国半

Buffered Triple 3-Input NAND,NOR Gate

文件：127.67 Kbytes 页数：6 Pages

NSC

国半

Buffered Triple 3-Input NAND,NOR Gate

文件：127.67 Kbytes 页数：6 Pages

NSC

国半