High Performance IR Enhanced P-Type silicon p-i-n Photodiodes

Features Optimized Responsivity for Operation at1064 nm. Guard Ring Construction Antireflection Coated Hermetically Sealed Package Wide Range of Operating Voltage (0to -200V) Applications Nd: YAG Laser Detection Optical Communications Intrusion Alarm Systems Process Control Instrument

文件：224.32 Kbytes 页数：4 Pages

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P-Channel 4 0 V (D-S) MOSFET

文件：1.08035 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 4 0 V (D-S) MOSFET

文件：1.08034 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Low Loss Filter

文件：81.75 Kbytes 页数：5 Pages

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