丝印：AG5；Package：SMB；600 W Transient Voltage Suppressor

1. General description 600 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMB Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits • Rated peak pulse power at 10/1000 μs waveform: PPPM = 600 W • Reverse standoff

文件：229.55 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：AG501EGD3；Package：TO-252；Pch -40V -80A Power MOSFET

Features Low on-resistance Pb-free plating;RoHS compliant 100% Avalanche tested AEC-Q101 qualified Application Automotive Systems

文件：2.77663 Mbytes 页数：14 Pages

ROHM

罗姆

丝印：AG502EED3；Package：TO-252；Pch -30V -78A Power MOSFET

Features Low on-resistance Pb-free plating;RoHS compliant 100% Avalanche tested AEC-Q101 qualified Application Automotive Systems

文件：2.85052 Mbytes 页数：14 Pages

ROHM

罗姆

丝印：AG502EGD3；Package：TO-252；Pch -40V -68A Power MOSFET

Features Low on-resistance Pd-free plating;RoHS compliant 100% Avalanche tested AEC-Q101 qualified Application Automotive Systems

文件：2.63045 Mbytes 页数：14 Pages

ROHM

罗姆

丝印：AG502ELD3；Package：TO-252；Pch -60V -48A Power MOSFET

Features Low on-resistance Pd-free plating;RoHS compliant 100% Avalanche tested AEC-Q101 qualified Application Automotive Systems

文件：2.78253 Mbytes 页数：14 Pages

ROHM

罗姆

丝印：AG508EGD3；Package：TO-252；Pch -40V -40A Power MOSFET

Features Low on-resistance Pb-free plating;RoHS compliant 100% Avalanche tested AEC-Q101 qualified Application Automotive Systems

文件：2.70041 Mbytes 页数：14 Pages

ROHM

罗姆

丝印：AG50EF5；Package：PG-TO263-3；High speed FAST IGBT in TRENCHSTOPTM 5 technology

Features and Benefits: High speed F5 technology offering: • Best-in-Class efficiency in hard switching and resonant topologies • 650V breakdown voltage • Low gate charge QG • Maximum junction temperature 175°C • Dynamically stress tested • Qualified according to AEC-Q101 • Green package (

文件：1.47169 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：AG50EH5；Package：PG-TO263-3；High speed IGBT in TRENCHSTOPTM 5 technology

Features and Benefits: High speed H5 technology offering: • Best-in-Class efficiency in hard switching and resonant topologies • Plug and play replacement of previous generation IGBTs • 650V breakdown voltage • Low gate charge QG • Maximum junction temperature 175°C • Dynamically stress te

文件：1.6323 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：AG50EF5；Package：PG-TO247-3；High speed fast IGBT in TRENCHSTOPTM 5 technology

文件：1.79407 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：AG50EH5；Package：PG-TO247-3；High speed fast IGBT in TRENCHSTOPTM 5 technology

文件：1.78884 Mbytes 页数：14 Pages

Infineon

英飞凌