SMBJ8.0CA

Marking：AG5；Package：SMB；600 W Transient Voltage Suppressor

1.Generaldescription 600Wuni-andbi-directionalTransientVoltageSuppressor(TVS)inaSMBSurface-Mounted Device(SMD)plasticpackage,designedfortransientvoltageprotection. 2.Featuresandbenefits •Ratedpeakpulsepowerat10/1000μswaveform:PPPM=600W •Reversestandoff

AG501EGD3HRB

Marking：AG501EGD3；Package：TO-252；Pch -40V -80A Power MOSFET

Features Lowon-resistance Pb-freeplating;RoHScompliant 100%Avalanchetested AEC-Q101qualified Application AutomotiveSystems

AG502EED3HRB

Marking：AG502EED3；Package：TO-252；Pch -30V -78A Power MOSFET

Features Lowon-resistance Pb-freeplating;RoHScompliant 100%Avalanchetested AEC-Q101qualified Application AutomotiveSystems

AG502EGD3HRB

Marking：AG502EGD3；Package：TO-252；Pch -40V -68A Power MOSFET

Features Lowon-resistance Pd-freeplating;RoHScompliant 100%Avalanchetested AEC-Q101qualified Application AutomotiveSystems

AG502ELD3HRB

Marking：AG502ELD3；Package：TO-252；Pch -60V -48A Power MOSFET

Features Lowon-resistance Pd-freeplating;RoHScompliant 100%Avalanchetested AEC-Q101qualified Application AutomotiveSystems

AIGB50N65F5

Marking：AG50EF5；Package：PG-TO263-3；High speed FAST IGBT in TRENCHSTOPTM 5 technology

FeaturesandBenefits: HighspeedF5technologyoffering: •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature175°C •Dynamicallystresstested •QualifiedaccordingtoAEC-Q101 •Greenpackage(

AIGB50N65H5

Marking：AG50EH5；Package：PG-TO263-3；High speed IGBT in TRENCHSTOPTM 5 technology

FeaturesandBenefits: HighspeedH5technologyoffering: •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature175°C •Dynamicallystresste

AIGW50N65F5

Marking：AG50EF5；Package：PG-TO247-3；High speed fast IGBT in TRENCHSTOPTM 5 technology

AIGW50N65H5

Marking：AG50EH5；Package：PG-TO247-3；High speed fast IGBT in TRENCHSTOPTM 5 technology