N-Channel Enhancement-Mode Lateral MOSFET

文件：526.88 Kbytes 页数：13 Pages

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N-Channel Enhancement-Mode Lateral MOSFET

文件：526.88 Kbytes 页数：13 Pages

恩XP

920-960 MHz，56 W平均值，28 V Airfast® LDMOS射频功率晶体管

The AFT09S200W02SR3 56 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 920 to 960 MHz. • Designed for Wide Instantaneous Bandwidth Applications\n• Designed for Digital Predistortion Error Correction Systems\n• Optimized for Doherty Applications\n• RoHS Compliant\n;

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