N--Channel Enhancement--Mode Lateral MOSFET

Features  Advanced High Performance In--Package Doherty  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems

文件：388.24 Kbytes 页数：16 Pages

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N--Channel Enhancement--Mode Lateral MOSFET

Features  Advanced High Performance In--Package Doherty  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems

文件：388.24 Kbytes 页数：16 Pages

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2300-2400 MHz，45 W平均值，28 V Airfast® LDMOS射频功率晶体管

The AFT23H201-24SR6 45 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz. • Advanced High Performance In-Package Doherty\n• Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• Designed for Digital Predistortion Error Correction Systems\n• RoHS Compliant;

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