RF Power LDMOS Transistors

文件：434.48 Kbytes 页数：15 Pages

恩XP

RF Power LDMOS Transistors

文件：434.48 Kbytes 页数：15 Pages

恩XP

1200-1400 MHz，1000 W峰值，50 V LDMOS射频功率晶体管

These RF power devices, AFV141KH, AFV141KHS and AFV141KGS, are designed for commercial applications operating at frequencies from 1200 to 1400 MHz such as commercial L-Band radars. The devices are suitable for use in pulse applications. • Internally Input and Output Matched for Broadband Operation and Ease of Use\n• Device Can Be Used Single-Ended, Push-Pull, or in a Quadrature Configuration\n• Qualified up to a Maximum of 50 VDD Operation\n• High Ruggedness, Handles > 20:1 VSWR\n• Integrated ESD Protection with Greater Negative Vo;

恩XP

BROADBAND RF POWER LDMOS TRANSISTOR, 960-1215 MHz, 1000 W PEAK, 50 V

These RF power devices, AFV141KH, AFV141KHS and AFV141KGS, are designed for commercial applications operating at frequencies from 1200 to 1400 MHz such as commercial L-Band radars. The devices are suitable for use in pulse applications. • Internally Input and Output Matched for Broadband Operation and Ease of Use\n• Device Can Be Used Single-Ended, Push-Pull, or in a Quadrature Configuration\n• Qualified up to a Maximum of 50 VDD Operation\n• High Ruggedness, Handles > 20:1 VSWR\n• Integrated ESD Protection with Greater Negative Vo;

恩XP