RF Power LDMOS Transistors

文件：760.33 Kbytes 页数：21 Pages

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RF Power LDMOS Transistors

文件：760.33 Kbytes 页数：21 Pages

恩XP

2496-2690 MHz，9 W平均值，28 V Airfast® LDMOS射频功率晶体管

The AFT26HW050SR3, AFT26HW050GSR3 and AFT26H050W26SR3 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capabilitycovering the frequency range of 2496 to 2690 MHz. • Advanced High Performance In-Package Doherty\n• Designed for Wide Instantaneous Bandwidth Applications\n• Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• Designed for Digital Predistortion Error Correction System\n• RoHS Compliant\n• In Tape and Reel. R3 Suffix = 250, ;

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