RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.  Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1800 mA, Pout = 50 Watts Avg., Input Sign

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RF Power LDMOS Transitor

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freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.  Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1800 mA, Pout = 50 Watts Avg., Input Sign

文件：461.16 Kbytes 页数：13 Pages

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1805-1880 MHz，50 W平均值，28 V Airfast® LDMOS射频功率晶体管

The AFT18S230SR3 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz. • Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• Designed for Digital Predistortion Error Correction Systems\n• Optimized for Doherty Applications\n• RoHS Compliant\n• In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13 inch Reel.;

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