Trench Power MOSFET

Alfa-MOS

闸能

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -20V ID = -3 A RDS(ON)

文件：222.36 Kbytes 页数：6 Pages

AOSMD

万国半导体

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive.

文件：27.76 Kbytes 页数：4 Pages

SANYO

三洋

3A, 2MHz Monolithic Synchronous Regulator for DDR/QDR Memory Termination

文件：243.55 Kbytes 页数：16 Pages

LINER

凌力尔特