Trench Power MOSFET

Alfa-MOS

闸能

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2317 is available in SOT-23 package. FEATURES  -20V/-4.6A , RDS(ON)= 48mΩ (Max.) @ VGS=-4.5V RDS(ON)= 70mΩ (Max.) @ VGS=-2.5V RDS(ON)=110mΩ(Max.) @ VGS=-1.8V  Reliable and Rugged  Available in SOT-23 Package APPLICATIONS  Power Management in Notebook Computer, P

文件：825.78 Kbytes 页数：9 Pages

AITSEMI

创瑞科技

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION AM2317A is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount package.

文件：651.7 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

MOSFET -20V SINGLE P-CHANNEL MOSFET

DESCRIPTION V DS 20V V GS =±8V ID(A)= 5.3 A R DS(ON) ON)=3 1 mΩ(Typ.)@V GS 4.5 V R DS(ON) ON)=4 0 mΩ(Typ.)@V GS 2.5 V R DS(ON) 50 mΩ(Typ.)@V GS 1.8 V R DS(ON) 60 mΩ(Typ.)@V GS 1.5 V The AM2317B is available in SOT-23 package. FEATURES  Trech DMOS Technology  1.5V Low gate dri

文件：660.47 Kbytes 页数：8 Pages

AITSEMI

创瑞科技