Trench Power MOSFET

Alfa-MOS

闸能

MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

FEATURES  TSSOP8 VDS= 20V, ID= 6.2A RDS(ON) =21mΩ(Typ.)@ VGS= 4.5V RDS(ON) =22mΩ(Typ.)@ VGS= 4.0V RDS(ON) =23mΩ(Typ.)@VGS = 3.2V RDS(ON) =25mΩ(Typ.)@VGS = 2.5V  SOT-26 VDS = 20V, ID = 6A RDS(ON) =22mΩ(Typ.)@VGS = 4.5V RDS(ON) =25mΩ(Typ.)@VGS = 2.5V  Fast switch  High power and curr

文件：886.85 Kbytes 页数：11 Pages

AITSEMI

创瑞科技

Super high density cell design for extremely low RDS(ON)

文件：780.31 Kbytes 页数：7 Pages

AMS

Five-line TVS Diode Array

General Description The AOZ8205 is a transient voltage suppressor diode array designed to protect data lines from high transient conditions and ESD. This state-of-the-art device utilizes AOS leading edge Trench Vertical Structure [TVS]2 ™ technology for superior clamping performance. Features ●

文件：358.32 Kbytes 页数：7 Pages

AOSMD

万国半导体