Trench Power MOSFET

Alfa-MOS

闸能

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION AM6802 is available in a SOT-26 package. FEATURES  30V/4A, RDS(ON)= 39mΩ(max.) @ VGS= 10V RDS(ON)= 68mΩ(max.) @ VGS= 4.5V  Reliable and Rugged  Available in a SOT-26 package. APPLICATION  Power Management in Notebook Computer, Portable Equipment and Battery Powered S

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AITSEMI

创瑞科技

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6802 is Pb-free (meets ROHS & Sony 259 specifications). AO6802L is a Green Product order

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AOSMD

万国半导体

30V Dual N-Channel MOSFET

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AOSMD

万国半导体