丝印：65SPD；Package：TO-247-3LD；Field Stop Trench IGBT with Soft Fast Recovery Diode 120A, 650V

文件：254.26 Kbytes 页数：9 Pages

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安森美半导体

丝印：AFGY120T65SPDA；Package：TO-247-3LD；Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning

文件：1.60511 Mbytes 页数：11 Pages

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安森美半导体

IGBT - 650 V 120 A FS3 for EV traction inverter application

AFGY120T65SPD which is AEC Q101 qualified IGBT which offers very low conduction and switch losses for a high efficiency operation in various applications, rugged transient reliability and low EMI. The part also offers an advantage of outstanding parallel operation performance with balance current sh • AEC Q101 qualified\n• Suitable for automotive applications\n• Low Vcesat voltage\n• low conduction losses\n• Tight parameter distribution\n• better current sharing during paralleling operations\n• Soft recovery diode\n• Low EMI;

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安森美半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT - 650 V 120 A FS3 FOR EV TR

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安森美半导体

IGBT - 650V, 120A Field Stop Trench IGBT with VCESAT and VTH Binning

AFGY120T65SPD-B4 is a 650 V 120 A IGBT based on trench field stop 3 technology. This product is binned based on Vcesat and Vth i.e. thetop side marking on each individual unit defines the range of Vcesat and Vth the particular device has. This allows customers to assemble units in parallel that have • Vcesat and Vth Binning\n• allows better current sharing and thermal management in application\n• Automotive Qualified\n• Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ.) @ IC = 120 A\n• Maximum Junction Temperature: TJ = 175°C\n• Positive Temperature Co-efficient\n• Tight Parameter Distributio;

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安森美半导体

Package：TO-247-3；包装：散装 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT FS3 120A 650V TO247-3

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安森美半导体