AFGY120T65SPD

Marking：65SPD；Package：TO-247-3LD；Field Stop Trench IGBT with Soft Fast Recovery Diode 120A, 650V

AFGY120T65SPD

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT - 650 V 120 A FS3 FOR EV TR

AFGY120T65SPD-B4

IGBT - 650V, 120A Field Stop Trench IGBT with VCESAT and VTH Binning; • Vcesat and Vth Binning\n• allows better current sharing and thermal management in application\n• Automotive Qualified\n• Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ.) @ IC = 120 A\n• Maximum Junction Temperature: TJ = 175°C\n• Positive Temperature Co-efficient\n• Tight Parameter Distribution\n• High Input Impedance\n• 100% of the Parts are Dynamically Tested\n• Short circuit ruggedness > 6μs @ 25 oC\n• Copacked with Soft, Fast Recovery Extremefast Diode\n• This Device is Pb-Free, Halogen Free/BFR Free and are RoHS Compliant\n;

AFGY120T65SPD-B4 is a 650 V 120 A IGBT based on trench field stop 3 technology. This product is binned based on Vcesat and Vth i.e. thetop side marking on each individual unit defines the range of Vcesat and Vth the particular device has. This allows customers to assemble units in parallel that have very close parameter distribution. This enables better current sharing in application.

AFGY120T65SPD-B4

Marking：AFGY120T65SPDA；Package：TO-247-3LD；Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning

AFGY120T65SPD-B4

Package：TO-247-3；包装：散装 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT FS3 120A 650V TO247-3