Field Stop Trench IGBT 40 A, 650 V

Description Using the novel field stop 3rd generation IGBT technology, AFGHL40T65SPD offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage and rugged high current swi

文件：455.16 Kbytes 页数：11 Pages

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安森美半导体

Field Stop Trench IGBT

文件：407.28 Kbytes 页数：10 Pages

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安森美半导体

Field Stop Trench IGBT 40 A, 650 V

Description Using the novel field stop 3rd generation IGBT technology, AFGHL40T65SPD offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage and rugged high current swi

文件：455.16 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

IGBT, 650V 40A in TO247 providing enhanced Final Test coverage for better and robuster performance.

Main upgrades comparing to FGH40T65SPD-F085\n1. Lead length is increased to 20mm that is better for system assembly work.\n2. 3x rated current dynamic screening test is applied in Final Test so that 100% of parts have present immunity to latch-up during switching.\n3. Narrow Final Test DC spec t • AEC-Q101 rev. D Qualified\n• Pass 100% HTRB test which gives better reliability performance than parts passing older versioin AEC-Q101\n• 100% of the part are dynamically tested\n• Enhanced transient immunity\n• Tight Parameter Distribution\n• Better current sharing when used in parallel;

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安森美半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：FS3 T TO247 40A 650V AUTO

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安森美半导体