AFGHL40T65SPD分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF中文资料

AFGHL40T65SPD属于分立半导体产品的晶体管-UGBT、MOSFET-单。由安森美半导体公司制造生产的AFGHL40T65SPD晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。

Description

Using the novel field stop 3rd generation IGBT technology,

AFGHL40T65SPD offers the optimum performance with both low

conduction loss and switching loss for a high efficiency operation in

various applications, which provides 50 V higher blocking voltage

and rugged high current switching reliability.

Meanwhile, this part also offers and advantage of outstanding

performance in parallel operation.

Features

 AEC−Q101 Qualified

 Low Saturation Voltage: VCE(Sat) = 1.85 V (Typ.) @ IC = 40 A

 100% Of The Part Are Dynamically Tested (Note 1)

 Short Circuit Ruggedness > 5 S @ 25C

 Maximum Junction Temperature: TJ = 175C

 Fast Switching

 Tight Parameter Distribution

 Positive Temperature Co−efficient for Easy Parallel Operating

 Co−Packed With Soft And Fast Recovery Diode

Typical Applications

 On−board Charger

 Air Conditioner Compressor

 PTC Heater

 Motor Drivers

 Other Automotive Power−Train Applications