P & N-Channel 30-V (D-S) MOSFET

文件：155.57 Kbytes 页数：4 Pages

ANACHIP

易亨电子

NP PAIR ENHANCEMENT MODE

DESCRIPTION The AM8958 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly

文件：536.26 Kbytes 页数：10 Pages

AITSEMI

创瑞科技

P & N-Channel 32-V (D-S) MOSFET

文件：243.35 Kbytes 页数：8 Pages

AnalogPower

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 30V, 21A, RDS(ON) = 26mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. -30V, -16A, RDS(ON) = 46mW @VGS = -10V. RDS(ON) = 77mW @VGS = -4.5V.

文件：951.6 Kbytes 页数：7 Pages

CET-MOS

华瑞