SOP8 N 20V 11MR

文件：1.454924 Mbytes 页数：5 Pages

BYCHIP

百域芯

PDF上传者：深圳市凯睿晟科技有限公司

N-Channel 30-V (D-S) MOSFET

文件：180.43 Kbytes 页数：5 Pages

ANACHIP

易亨电子

N-Channel 20V (D-S) MOSFET

文件：1.0066 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Fast high-voltage soft-recovery controlled avalanche rectifiers

DESCRIPTION Plastic package, using glass passivation and a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package should be used in an insulating medium such as resin, oil or SF6 gas. FE

文件：67.77 Kbytes 页数：8 Pages

PHI

PHI

Bipolar Power Transistors

Bipolar Power Transistors NPN Silicon • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 85 (Min) @ IC = 1.0 Adc = 60 (Min) @ IC = 3.0 Adc • Low Collector –Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC =

文件：95.57 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. Applications ■ DC to DC convertors ■ DC motor control ■ Lithium-ion battery applications ■ Notebo

文件：266.56 Kbytes 页数：13 Pages

PHI

PHI