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BF908

Dual-gateMOS-FETs

DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.Thetransistorsareprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES •Highforwardtransferadmittance •Shortch

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

BF908

Dual-gateMOS-FETs

DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.Thetransistorsareprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES •Highforwardtransferadmittance •Shortch

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BF908

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BF908R

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BF908R

Dual-gateMOS-FETs

DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.Thetransistorsareprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES •Highforwardtransferadmittance •Shortch

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BF908R

Dual-gateMOS-FETs

DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.Thetransistorsareprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES •Highforwardtransferadmittance •Shortch

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

BF908WR

N-channeldual-gateMOS-FET

DESCRIPTION DepletiontypefieldeffecttransistorinaplasticmicrominiatureSOT343Rpackage.Thetransistoris protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES •Highforwardtransferadmittance •Shortchanne

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

BF908WR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BU908

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

BU908

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

供应商型号品牌批号封装库存备注价格
24+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
询价
ATMEL
24+
QFP
30675
现货热卖
询价
ATMEL
24+
QFP
30000
专业代理ATMEL全系列产品全新进口原装
询价
Microchip
23+
2017-MI
21500
受权代理!全新原装现货特价热卖!
询价
ATMEL
23+
QFN
5000
专注配单,只做原装进口现货
询价
ATMEL
23+
QFN
5000
专注配单,只做原装进口现货
询价
MICROCHIP/微芯
2406+
33600
诚信经营!进口原装!量大价优!
询价
SCRAP
24+
5599
询价
NEC
24+
TO-220
5000
全现原装公司现货
询价
NEC
23+
TO-220
50000
全新原装正品现货,支持订货
询价
更多AE908供应商 更新时间2025-5-1 11:06:00